1815 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 May 28

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistor

2PC1815

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

250

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =60V

−−

100

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

100

hFE

DC current gain

IC = 150 mA; VCE =6V

−−

hFE

DC current gain

IC = 2 mA; VCE =6V

2PC1815

120

−

700

2PC1815Y

120

−

240

2PC1815GR

200

−

400

2PC1815BL

350

−

700

VCEsat

collector-emitter saturation voltage

IC = 100 mA; IB =10mA

−−

300

VBEsat

base-emitter saturation voltage

IC = 100 mA; IB =10mA

−−

1.1

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

2.5

3.5

transition frequency

IC = 1 mA; VCE = 6 V; f = 100 MHz 80

−−

MHz

noise ﬁgure

IC = 200 µA; VCE =5V;

RS =2k Ω; f = 1 kHz

−−

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