2PC4081R datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 08

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistor

2PC4081

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =30V

−−

100

IE = 0; VCB = 30 V; Tj = 150 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =4V

−−

100

hFE

DC current gain

IC = 1 mA; VCE =6V

2PC4081Q

120

−

270

2PC4081R

180

−

390

2PC4081S

270

−

560

VCEsat

collector-emitter saturation voltage IC = 50 mA; IB = 5 mA; note 1

−−

400

collector capacitance

IE =ie = 0; VCB = 12 V; f = 1 MHz

−

3.5

transition frequency

IC = 2 mA; VCE = 12 V; f = 100 MHz 100

−−

MHz

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