AlGaAs SP8T PIN Diode Switch

MA4AGSW8-2

V 1.00

M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)

or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

2

D.C. Bias to RF Truth Table

Input Port

@J2

@J3

@J4

@J5

@J6

@J7

@J8

@J9

J1

Low Loss

Isolation

Isolation

Isolation

Isolation

Isolation

Isolation

Isolation

J1

Isolation

Low Loss

Isolation

Isolation

Isolation

Isolation

Isolation

Isolation

J1

Isolation

Isolation

Low Loss

Isolation

Isolation

Isolation

Isolation

Isolation

J1

Isolation

Isolation

Isolation

Low Loss

Isolation

Isolation

Isolation

Isolation

Output Ports

J1

Isolation

Isolation

Isolation

Isolation

Low Loss

Isolation

Isolation

Isolation

J1

Isolation

Isolation

Isolation

Isolation

Isolation

Low Loss

Isolation

Isolation

J1

Isolation

Isolation

Isolation

Isolation

Isolation

Isolation

Low Loss

Isolation

J1

Isolation

Isolation

Isolation

Isolation

Isolation

Isolation

Isolation

Low Loss

(On-Wafer Measurements)

RF Specifications

Parameter

Frequency

Minimum

Typical

Maximum

Units

Insertion Loss

0.05 - 18 GHz

18 - 26 GHz

26 - 40 GHz

-

-

-

1.5

1.8

2.0

2.0

2.1

2.3

dB

dB

dB

Isolation

1

0.05 - 18 GHz

18 - 26 GHz

26 - 40 GHz

40

35

30

45

42

35

-

-

-

dB

dB

dB

Input/Output Return Loss

0.05 - 18 GHz

18 - 26 GHz

26 - 40 GHz

10

13

17

15

15

20

-

-

-

dB

dB

dB

Switching Speed

2

10 GHz

-

20

-

ns

1. Low Loss = -15mA applied at the specified Output Port. (A dc ground return at port J1 must be provided)

2. Isolation = 0 Volts applied at the specified Output Ports.

NOTES:

1. Isolation is measured through (3) Diodes from Common Port ( Input ) to Selected Output Port with (1) Opposite Port in Low

Loss. Isolation for (2) Diodes from Common Port ( Input ) to Selected Output with (1) Adjacent Port in Low Loss = 22 dB

Typical.

2. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a +/- 5 V TTL compatible driver.

Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and a resistor between 150 - 220 Ohms to

achieve 20 ns rise and fall times.

NOTES: