HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200407

Issued Date : 2004.10.01

Revised Date : 2005.04.22

Page No. : 2/4

HIRF830, HIRF830F

HSMC Product Specification

Symbol

Characteristic

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-Source Breakdown Voltage (V

500

-

-

V

Drain-Source Leakage Current (V

-

-

1

uA

I

DSS

Drain-Source Leakage Current (V

50

uA

I

GSSF

Gate-Source Leakage Current-Forward (V

-

-

100

nA

I

GSSR

Gate-Source Leakage Current-Reverse (V

-

-

-100

nA

V

GS(th)

Gate Threshold Voltage (V

2

-

4

V

R

DS(on)

Static Drain-Source On-Resistance (V

-

-

1.5

Ω

g

FS

Forward Transconductance (V

2.5

-

-

S

C

iss

Input Capacitance

-

800

-

C

oss

Output Capacitance

-

100

-

C

rss

Reverse Transfer Capacitance

V

-50

-

pF

t

d(on)

Turn-on Delay Time

-

8.2

-

t

r

Rise Time

-

46

-

t

d(off)

Turn-off Delay Time

-

90

-

t

f

Fall Time

(V

R

-45

-

ns

Q

g

Total Gate Charge

-

-

38

Q

gs

Gate-Source Charge

-

-

5

Q

gd

Gate-Drain Charge

(V

(*4)

--

22

nC

L

D

Internal Drain Inductance (Measured from the drain lead 0.25” from

package to center of die)

-4.5

-

nH

L

S

Internal Source Inductance (Measured from the drain lead 0.25” from

package to source bond pad)

-7.5

-

nH

*4: Pulse Test: Pulse Width

≤300us, Duty Cycle≤2%

Source-Drain Diode

Symbol

Characteristic

Min.

Typ.

Max.

Units

Q

rr

Reverse Recovery Charge

-

1

2

uC

t

on

Forward Turn-On Time

-

**

-

t

rr

Reverse Recovery Time

I

(*4)

-

320

640

ns

V

SD

Diode Forward Voltage

I

--

1.6

V

**: Negligible, Dominated by circuit inductance