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TLP176AM Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TLP176AM Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 12 page ![]() TLP176AM 4 8. Absolute Maximum Ratings (UL-approved: UL 508) (Note) (Unless otherwise specified, Ta = 25 �) LED Detector Common Characteristics Input forward current Input forward current derating Input forward current (pulsed) Input reverse voltage Input power dissipation Input power dissipation derating Junction temperature OFF-state output terminal voltage ON-state current ON-state current derating ON-state current (pulsed) Output power dissipation Output power dissipation derating Junction temperature Storage temperature Case temperature Operating temperature Lead soldering temperature Isolation voltage (Ta ≥ 25 �) (100 µs pulse, 100 pps) (Ta ≥ 25 �) (Ta ≥ 25 �) (t = 100 ms, duty = 1/10) (Ta ≥ 25 �) (10 s) (AC, 60 s, R.H. ≤ 60 %) Symbol IF ∆IF/∆Ta IFP VR PD ∆PD/∆Ta Tj VOFF ION ∆ION/∆Ta IONP PO ∆PO/∆Ta Tj Tstg Tc Topr Tsol BVS Note (Note 1) Rating 30 -0.3 1 6 50 -0.5 105 60 700 -7.0 2.1 300 -3.0 105 -55 to 125 105 -40 to 85 260 3750 Unit mA mA/� A V mW mW/� � V mA mA/� A mW mW/� � � � � � Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together. 9. Recommended Operating Conditions (UL-approved: UL 508) (Note) Characteristics Supply voltage Input forward current ON-state current Operating temperature Symbol VDD IF ION Topr Note (Note 1) (Note 1) Min � 5 � -20 Typ. � 7.5 � � Max 48 19.5 455 85 Unit V mA mA � Note: The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this data sheet should also be considered. Note 1: The above recommended operating conditions are at Ta = 60 �. However, within the derating range of the characteristic curves of "IF - Ta", "ION - Ta", it can be used up to 85 �. 2021-05-27 Rev.6.0 ©2017-2021 Toshiba Electronic Devices & Storage Corporation |
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