MCP6V89-ESLASHST datasheet(5/52 Pages) MICROCHIP

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 2020 Microchip Technology Inc.

DS20006398A-page 5

MCP6V86/6U/7/9

TABLE 1-2:

AC ELECTRICAL CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +5.5V, VSS =GND,

VCM =VDD/3, VOUT =VDD/2, VL =VDD/2, RL =10kΩ to VL and CL = 30 pF (refer to Figures 1-4 and 1-5).

Parameters

Sym.

Min.

Typ. Max.

Units

Conditions

Amplifier AC Response

Gain Bandwidth Product

GBWP

—

MHz

Slew Rate

—

V/µs

Phase Margin

—

°C

G = +1

Amplifier Noise Response

Input Noise Voltage

Eni

—0.1

—

µVP-P f= 0.01 Hz to 1Hz

Eni

—0.28

—

µVP-P f = 0.1 Hz to 10 Hz

Input Noise Voltage Density

eni

—13

—

nV/√Hz f < 2 kHz

Input Noise Current Density

ini

—6

—

fA/√Hz

Amplifier Distortion(1)

Intermodulation Distortion (AC)

IMD

—

100

—

µVPK VCM tone = 100 mVPK at 1 kHz,

GN =11, RTI

Amplifier Step Response

Start-up Time

tSTR

—

100

—

µs

G = +1, 0.1% VOUT settling (Note 2)

Offset Correction Settling Time

tSTL

—30

—

µs

G = +1, VIN step of 2V,

VOS within 100 µV of its final value

Output Overdrive Recovery Time

tODR

—

µs

G = -10, ±0.5V input overdrive to VDD/2,

VIN 50% point to VOUT 90% point (Note 3)

EMI Protection

EMI Rejection Ratio

EMIRR

—

VIN =0.1 VPK, f = 400 MHz

—100

—

VIN =0.1 VPK, f = 900 MHz

—101

—

VIN =0.1 VPK, f = 1800 MHz

—105

—

VIN =0.1 VPK, f = 2400 MHz

Note 1:

These parameters were characterized using the circuit in Figure 1-6. In Figures 2-36 and 2-37, there is an IMD

tone at DC, a residual tone at 1 kHz, and other IMD tones and clock tones. IMD is Referred to Input (RTI).

High gains behave differently; see Section 4.3.2 “Offset at Power-up”.

tSTL and tODR include some uncertainty due to clock edge timing.

TABLE 1-3:

TEMPERATURE SPECIFICATIONS

Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = +2.2V to +5.5V, VSS =GND.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges

Specified Temperature Range

-40

—

+125

°C

Operating Temperature Range

-40

—

+125

°C

Note 1

Storage Temperature Range

-65

—

+150

°C

Thermal Package Resistances

Thermal Resistance, 5-Lead SC70

JA

—209

—

°C/W

Thermal Resistance, 5-Lead SOT-23

JA

—201

—

°C/W

Thermal Resistance, 8-Lead 2x3 TDFN

JA

—53

—

°C/W

Thermal Resistance, 8-Lead MSOP

JA

—211

—

°C/W

Thermal Resistance, 14-Lead TSSOP

JA

—100

—

°C/W

Note 1:

Operation must not cause TJ to exceed Maximum Junction Temperature specification (+150°C).

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