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74AHCT595D Datasheet(PDF) 2 Page - NXP Semiconductors

Part # 74AHCT595D
Description  8-bit serial-in/serial or parallel-out shift register with output latches; 3-state
PDF  20 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74AHCT595D Datasheet(HTML) 2 Page - NXP Semiconductors

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2000 Mar 15
2
Philips Semiconductors
Product specification
8-bit serial-in/serial or parallel-out shift
register with output latches; 3-state
74AHC595; 74AHCT595
FEATURES
• ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
CDM EIA/JESD22-C101 exceeds 1000 V
• Balanced propagation delays
• All inputs have Schmitt-trigger actions
• Inputs accept voltages higher than VCC
• For AHC only: operates with CMOS input levels
• For AHCT only: operates with TTL input levels
• Specified from −40 to +85 °C and from−40 to +125 °C.
APPLICATIONS
• Serial-to-parallel data conversion
• Remote control holding register.
DESCRIPTION
The 74AHC/AHCT595 are high-speed Si-gate CMOS
devices and are pin compatible with Low power Schottky
TTL (LSTTL). They are specified in compliance with
JEDEC standard No. 7A.
The 74AHC/AHCT595 is an 8-stage serial shift register
with a storage register and 3-state outputs. The shift
register has separate clocks.
Data is shifted on the positive-going transitions of the
SHCP input. The data in each register is transferred to the
storage register on a positive-going transition of the STCP
input. If both clocks are connected together, the shift
register will always be one clock pulse ahead of the
storage register.
The shift register has a serial input (DS) and a serial
standard output (Q7’) for cascading. It is also provided with
asynchronous reset (active LOW) for all 8 shift register
stages. The storage register has 8 parallel 3-state bus
driver outputs. Data in the storage register appears at the
output whenever the output enable input (OE) is LOW.
QUICK REFERENCE DATA
GND = 0 V; Tamb =25 °C; tr =tf ≤ 3.0 ns.
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
∑ (CL × VCC2 × fo) = sum of outputs;
CL = output load capacitance in pF;
VCC = supply voltage in Volts.
2. The condition is VI = GND to VCC.
3. All 9 outputs switching.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
AHC
AHCT
tPHL/tPLH
propagation delay
CL = 15 pF; VCC =5V
SHCP to Q7’
4.0
3.8
ns
STCP to Qn
4.2
4.0
ns
MR to Q7’
4.4
4.6
ns
CI
input capacitance
3.0
3.0
pF
fmax
maximum clock frequency
170
170
MHz
CPD
power dissipation capacitance
CL = 50 pF; f = 1 MHz; notes 1, 2 and 3 180
190
pF



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