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2SC5967 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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2SC5967 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() 2SC5967 No.7614-2/4 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit DC Current Gain hFE1VCE=5V, IC=1A 15 hFE2VCE=5V, IC=15A 4 7 Collectoe-to-Emitter Saturation Voltage VCE(sat) IC=13.5A, IB=3.4A 3 V Base-to-Emitter Saturation Voltage VBE(sat) IC=13.5A, IB=3.4A 1.5 V Storage Time tstg IC=10A, IB1=1.6A, IB2=--5.0A 3.0 µs Fall Time tf IC=10A, IB1=1.6A, IB2=--5.0A 0.2 µs Switching Time Test Circuit VR RB VCC=200V VBE= --5V + + 50 Ω INPUT OUTPUT RL=20Ω 100 µF 470 µF PW=20 µs D.C. ≤1% IB1 IB2 Base-to-Emitter Voltage, VBE -- V IT06367 16 14 12 10 8 6 4 2 0 010 9 8 7 6 5 4 3 2 1 IC -- VCE Collector-to-Emitter Voltage, VCE -- V IT06366 VCE(sat) -- IC IC -- VBE Collector Current, IC -- A IT06369 hFE -- IC Collector Current, IC -- A IT06368 25 20 15 10 5 0 0 1.2 1.0 0.8 0.6 0.4 0.2 IB=0 0.1A 0.2A 0.4A 0.6A 1.2A 1.4A 1.6A 1.8A 2.0A 0.8A 1.0A VCE=5V 0.1 3 25 7 3 25 7 2 3 1.0 10 2 3 5 7 1.0 0.1 2 3 5 7 0.01 2 3 5 7 10 Ta= --40 °C 120 °C 120 °C IC / IB=5 25°C 100 5 3 2 3 2 10 1.0 7 7 5 0.1 3 25 7 3 25 7 2 3 1.0 10 Ta=120°C 25°C --40°C VCE=5V |
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