AOSS32128

Symbol

Min

Typ

Max

Units

BVDSS

20

V

VDS=20V, VGS=0V

1

TJ=55°C

5

IGSS

±10

μA

VGS(th)

Gate Threshold Voltage

0.4

0.85

1.3

V

55

75

TJ=125°C

75

102

66

90

mΩ

86

120

mΩ

gFS

11

S

VSD

0.75

1

V

IS

2

A

Ciss

190

pF

Coss

30

pF

Crss

23

pF

Rg

4

8

12

Ω

Qg(4.5V)

2.2

6

nC

Qgs

0.2

nC

Qgd

0.6

nC

tD(on)

5.5

ns

tr

6

ns

tD(off)

21.5

ns

tf

5

ns

trr

3.7

ns

Qrr

1.7

nC

Gate Drain Charge

Total Gate Charge

SWITCHING PARAMETERS

VGS=4.5V, ID=3.6A

m

Ω

VGS=4.5V, VDS=10V,

ID=3.6A

Reverse Transfer Capacitance

VGS=0V, VDS=10V, f=1MHz

Output Capacitance

Forward Transconductance

IS=1A, VGS=0V

VDS=5V, ID=3.6A

RDS(ON)

Diode Forward Voltage

Gate Source Charge

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT

ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE

CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY

OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS,

INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:

http://www.aosmd.com/terms_and_conditions_of_sale

Body Diode Reverse Recovery Charge

Body Diode Reverse Recovery Time

IF=3.6A, di/dt=300A/ms

Turn-Off DelayTime

Turn-Off Fall Time

VGS=4.5V, VDS=10V, RL=2.78W,

RGEN=3W

IF=3.6A, di/dt=300A/ms

Turn-On Rise Time

Turn-On DelayTime

Gate resistance

f=1MHz

Maximum Body-Diode Continuous Current

Input Capacitance

DYNAMIC PARAMETERS

VGS=2.5V, ID=3A

Static Drain-Source On-Resistance

VGS=1.8V, ID=1A

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

μA

Zero Gate Voltage Drain Current

VDS=VGS, ID=250mA

VDS=0V, VGS=±8V

Gate-Body leakage current

Parameter

Conditions

Drain-Source Breakdown Voltage

ID=250μA, VGS=0V

IDSS

A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation P

D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialT

J=25°C.

D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

ms pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)=150°C. The SOA curve provides a single pulse rating.

Rev.1.1: February 2022

www.aosmd.com

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