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BFC19 Datasheet(PDF) 2 Page - Seme LAB

Part # BFC19
Description  4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
PDF  2 Pages
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Manufacturer  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

BFC19 Datasheet(HTML) 2 Page - Seme LAB

  BFC19 Datasheet HTML 1Page - Seme LAB BFC19 Datasheet HTML 2Page - Seme LAB  
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BFC19
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
86
344
1.8
270
535
1070
6
13
26
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94
IS
ISM
VSD
trr
Qrr
VGS = 0V , IS = – ID [Cont.]
IS = – ID [Cont.]
dls / dt = 100A/µs
Continuous Source Current (Body Diode)
Pulsed Source Current1(Body Diode)
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
µC
Characteristic
Min.
Typ.
Max. Unit
3
5
2500
70
13
LD
LS
VIsolation
CIsolation
Torque
Internal Drain Inductance (Measured From Drain Terminal to Centre of Die)
Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)
RMS Voltage (50–60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance
f = 1MHz
Maximum Torque for Device Mounting Screws and Electrical Terminations
nH
V
pF
in–lbs
Characteristic
Min.
Typ.
Max. Unit
0.18
0.05
RθJC
RθCS
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
°C/W
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
PACKAGE CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6Ω
pF
nC
ns
11140 14000
2600
3640
960
1440
507
760
70
105
234
350
21
40
41
80
62
95
14
30
LAB
SEME
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.



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