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ISC104N12LM6 Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # ISC104N12LM6
Description  OptiMOSTM 6 Power-Transistor, 120 V
PDF  11 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

ISC104N12LM6 Datasheet(HTML) 4 Page - Infineon Technologies AG

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4
OptiMOSTM6Power-Transistor,120V
ISC104N12LM6
Rev.2.0,2022-12-13
Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
120
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
1.2
1.7
2.2
V
VDS=VGS,ID=35µA
Zero gate voltage drain current
IDSS
-
-
0.1
10
1.0
100
µA
VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
-
-
8.8
11.4
16.6
10.4
14.1
-
m
Ω
VGS=10V,ID=28A
VGS=4.5V,ID=14A
VGS=3.3V,ID=4.6A
Gate resistance
RG
0.46
0.91
1.37
Ω
-
Transconductance
gfs
30
57
-
S
|VDS|
≥2|ID|RDS(on)max,ID=28A
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
Ciss
-
1400
1800
pF
VGS=0V,VDS=60V,f=1MHz
Output capacitance
1)
Coss
-
340
440
pF
VGS=0V,VDS=60V,f=1MHz
Reverse transfer capacitance
1)
Crss
-
10
17
pF
VGS=0V,VDS=60V,f=1MHz
Turn-on delay time
td(on)
-
6
-
ns
VDD=60V,VGS=10V,ID=14A,
RG,ext=1.6
Ω
Rise time
tr
-
2.5
-
ns
VDD=60V,VGS=10V,ID=14A,
RG,ext=1.6
Ω
Turn-off delay time
td(off)
-
14
-
ns
VDD=60V,VGS=10V,ID=14A,
RG,ext=1.6
Ω
Fall time
tf
-
4
-
ns
VDD=60V,VGS=10V,ID=14A,
RG,ext=1.6
Ω
Table6Gatechargecharacteristics2)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
1)
Qgs
-
4
5.3
nC
VDD=60V,ID=14A,VGS=0to4.5V
Gate charge at threshold
1)
Qg(th)
-
2.5
3.3
nC
VDD=60V,ID=14A,VGS=0to4.5V
Gate to drain charge
1)
Qgd
-
3.4
5.1
nC
VDD=60V,ID=14A,VGS=0to4.5V
Switching charge
Qsw
-
5
-
nC
VDD=60V,ID=14A,VGS=0to4.5V
Gate charge total
1)
Qg
-
10.4
13
nC
VDD=60V,ID=14A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.8
-
V
VDD=60V,ID=14A,VGS=0to4.5V
Gate charge total
1)
Qg
-
19.6
26
nC
VDD=60V,ID=14A,VGS=0to10V
Output charge
1)
Qoss
-
37
49
nC
VDS=60V,VGS=0V
1) Defined by design. Not subject to production test.
2) See
″Gate charge waveforms″ for parameter definition



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