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2SC5832 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # 2SC5832
Description  NPN Epitaxial Planar Silicon Transistor
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC5832 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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2SC5832
No.7287-2/4
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
On-chip zener diode(65
±10V)
55
V
Collector-to-Emitter Voltage
VCEO
On-chip zener diode(65
±10V)
55
V
Emitter-to-Base Voltage
VEBO
6V
Collector Current
IC
2A
Collector Current (Pulse)
ICP
4A
Collector Dissipation
PC
1.0
W
Tc=25
°C10
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=40V, IE=0
10
µA
Emitter Cutoff Current
IEBO
VEB=5V, IC=0
2
mA
DC Current Gain
hFE
VCE=5V, IC=1A
1000
4000
Gain-Bandwidth Product
fT
VCE=5V, IC=1A
180
MHz
Inductive Load
Es / b
L=100mH, RBE=100Ω
25
mJ
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=1A, IB=4mA
1.0
1.5
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=1A, IB=4mA
2.0
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=100µA, IE=0
55
65
75
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
55
65
75
V
Turn-ON Time
ton
See specified Test Circuit.
0.2
µs
Storage Time
tstg
See specified Test Circuit.
3.5
µs
Fall Time
tf
See specified Test Circuit.
0.5
µs
Switching Time Test Circuit
Es / b Test Circuit
VBB= --5V
VCC=20V
+VCC
INPUT
OUTPUT
100
µF
470
µF
50
Ω
RB
RL
20
Ω
VR
IC=250A, IB1= --250A, IB2=1A
PW=50
µs, Duty Cycle≤1%
IB1= --IB2=4mA
TUT
RBE
IB
VCC=20V, RBE=100Ω
TUT
L
300
Ω
10k
Ω
++
SW
2.0
1.6
0.4
0.8
1.2
0
01
3
24
5
IC -- VCE
IB=0
150
µA
200µA
250µ
A
300µ
A
1000
µA
1500
µA
350µ
A
400µ
A
450µ
A
500
µA
ITR06005
2.4
1.6
2.0
1.2
0.8
0.4
0
0
0.4
0.8
1.2
2.8
2.0
2.4
1.6
IC -- VBE
ITR06006
VCE=5V
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V



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