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YOUDA TRANSISTOR
D2012
Si NPN TRANSISTOR—D2012
DESCRIPTION AND FEATURES
*Collector-Emitter voltage: BVCBO= 60V
*Collector current up to 3A
*High hFE linearity
PIN CONFIGURATIONS
PIN
SYMBOL
1
Emitter
2
Collector
3
Base
ABSOLUTE MAXIMUM RATINGS
(Tamb=25℃)
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
BVCBO
60
V
Collector-Emitter Voltage
BVCEO
50
V
Emitter-Base Voltage
BVEBO
7
V
Tcase=25℃
30
W
Collector Dissipation
Tamb=25℃
PCM
1.5
W
DC
ICM
3
A
Collector Current
Pulse
Icp
7
A
Base Current
IB
0.6
A
Junction Temperature
Tj
+150
℃
Storage Temperature
Tstg
-55～+150
℃
ELECTRICAL CHARACTERISTICS
(Tamb=25℃,all voltage referenced to GND Unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cut-Off Current
ICBO
VcB=50V, IE=0
100
nA
Emitter Cut-Off Current
IEBO
VEB=5V, IC=0
100
nA
hFE1
VcE=5V, IC=20mA
30
200
DC Current Gain
hFE2
VcE=5V, IC=0.5A
100
400
Collector-Emitter Saturation Voltage
VCE(sat)
Ic=3A, IB=0.3A
0.3
0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
Ic=2A, IB=0.2A
1.0
2.0
V
Current Gain Bandwidth Product
fT
VcE=5V, IC=0.1A
5
MHz
Output Capacitance
Cob
VcB=10V,
IE=0,f=1MHz
80
pF
CLASSIFICATION OF hFE
RANK
Q
P
E
RANGE
100～200
160～320
200～400
WuXi YouDa Electronics Co., Ltd
Add:
No.5 Xijin Road, National Hi-Tech Industrial Development Zone, Wuxi Jiangsu China
Tel:
86-510-5205117
86-510-5205108
Fax:
86-510-5205110
Website: www.e-youda.com
SHENZHEN OFFICE
Tel： 86-755-83740369
13823533350
Fax： 86-755-83741418
Ver
3.1
1 of 1
2004-9-20
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