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1SS355 Datasheet(PDF) 2 Page - Weitron Technology |
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1SS355 Datasheet(HTML) 2 Page - Weitron Technology |
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2 / 3 page ![]() 1SS 355 WEITRON Maximum Ratings Thermal Characteristics Device Marking Electrical Characteristics (TA=25 C Unless Otherwise note) Off Characteristics Rating Symbol Value Unit Characterictics Symbol Max Unit Characterictics Symbol Max Unit Reverse Voltage Forward Current Peak Forward Surge Current VR IF IFM(Surge) 100 100 500 Vdc mAdc mAdc Total Device Dissipation FR-5 Board TA=25 C Derate Above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2)TA=25 C Derate Above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature PD PD R JA TJ, Tstg 225 1.8 556 300 2.4 417 -55 to + 150 mW mW/ C mW mW/ C C/W C/W C Min Reverse Breakdown Votalge (IR=100µAdc) Forward Voltage(IF=100mAdc) Reverse Voltage Leakage Current (VR=80Vdc) Revarse Recover Time (IF=IR=10mAdc) V(BR) VF IR Diode Capacitance (VR=0.5V, f=1.0MHz) CT trr 100 1200 3.5 4.0 Vcc mV dc µAdc pF ns 1. FR-5=1.0x0.75x0.062 in 2.Alumina=0.4x0.3x0.024 in. 99.5% alumina. Item Marking Eqivalent Circuitdiagram 1SS 355 5D 2 1 0.1 http://www.weitron.com.tw q R JA q |
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