US3AC THRU US3MC

Features

· Low profile package

· Ideal for automated placement

· Glass passivated chip junction

· Ultrafast reverse recovery time

· Low switching losses, high efficiency

· High forward surge capability

· High temperature soldering:

260℃/10 seconds at termianls

· Component in accordance to

RoHS 2002/95/1 and WEEE 2002/96/EC

Maximum Ratings and Electrical Characteristics

CURRENT 3.0 A

VOLTAGE 50 to 1000 V

Mechanical Data

· Case : JEDEC DO-214AB molded plastic

body over glass passivated chip

· Terminals : Solder plated, solderable per

JESD22-B102D

· Polarity : Laser band denotes cathode end

(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive

load. For capacitive load, derate by 20%)

Dimensions in inches and (millimeters)

ULTRAFAST RECOVERY RECTIFIER

https://dec.co.kr

DAESAN ELECTRONIC CORP.

DO-214AB(SMC)

0.008(0.203)

MAX.

0.114(2.90)

0.126(3.20)

0.220(5.59)

0.245(6.22)

0.260(6.60)

0.280(7.11)

0.006(0.152)

0.012(0.305)

0.305(7.75)

0.320(8.13)

0.030(0.76)

0.060(1.52)

0.081(2.06)

0.103(2.62)

Maximum recurrent peak reverse voltage

Reverse current

VR=VDC

Typical junction capacitance (Measured at

1.0MHz and applied reverse voltage of 4.0V)

Maximum average forward rectified current

Peak forward surge current 8.3ms single

half sine-wave superimposed on rated load

Instantaneous forward voltage at 3.0A (1)

VRRM

VRMS

Symbols

Units

VDC

IF(AV)

5

50

20

Items

CJ

RθJL

35

IFSM

A

A

V

Maximum RMS voltage

Maximum DC blocking voltage

US3AC

50

70

100

140

200

280

400

420

600

560

800

50

100

200

400

600

800

700

1000

1000

V

V

100

3.0

Maximum reverse recovery time (2)

TRR

IR

TJ=25℃

TJ=125℃

US3BC US3DC US3GC US3JC US3KC US3MC

50

TJ,TSTG

Operating junction and storage

temperature range

Typical thermal resistance (3)

-55 to +150

℃

℃/W

1.3

1.0

1.7

75

μA

ns

pF

30

VF

Notes:

(1) Mounted on P.C.B with 0.32 x 0.32” (8.0 x 8.0mm) copper pad areas.

(2) Test conditions : IF=0.5A, IR=1.0A Irr=0.25A

(3) Pulse test : 300μs pulse width, 1% duty cycle.

V