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IXDP20N60B Datasheet(PDF) 1 Page - IXYS Corporation |
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IXDP20N60B Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 4 page ![]() © 2000 IXYS All rights reserved 1 - 4 Symbol Conditions Maximum Ratings V CES T J = 25°C to 150°C 600 V V CGR T J = 25°C to 150°C; R GE = 20 k W 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25°C 32 A I C90 T C = 90°C 20 A I CM T C = 90°C, t p =1 ms 40 A RBSOA V GE = ±15 V, TJ = 125°C, RG = 22 W I CM = 60 A Clamped inductive load, L = 30 µH V CEK < VCES t SC V GE = ±15 V, VCE = 600 V, TJ = 125°C 10 µs (SCSOA) R G = 22 W, non repetitive P C T C = 25°C IGBT 140 W Diode 50 W T J -55 ... +150 °C T stg -55 ... +150 °C Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s M d Mounting torque 0.4 - 0.6 Nm Weight 2g V CES = 600 V I C25 = 32 A V CE(sat) typ = 2.2 V Features q NPT IGBT technology q low switching losses q low tail current q no latch up q short circuit capability q positive temperature coefficient for easy paralleling q MOS input, voltage controlled q optional ultra fast diode q International standard package Advantages q Space savings q High power density Typical Applications q AC motor speed control q DC servo and robot drives q DC choppers q Uninteruptible power supplies (UPS) q Switch-mode and resonant-mode power supplies High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage IXDP 20N60 B IXDP 20N60 BD1 Symbol Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V (BR)CES V GE = 0 V 600 V V GE(th) I C = 0.4 mA, V CE = VGE 35 V I CES V CE = V CES T J = 25°C 0.1 mA T J = 125°C 0.7 mA I GES V CE = 0 V, V GE = ± 20 V ± 500 nA V CE(sat) I C = 20 A, V GE = 15 V 2.2 2.8 V G = Gate, E = Emitter C = Collector , TAB = Collector TO-220 AB C (TAB) G C E IXDP 20N60B IXDP 20N60B D1 G C E G C E |
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