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AP22653Q Datasheet(PDF) 3 Page - Diodes Incorporated |
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AP22653Q Datasheet(HTML) 3 Page - Diodes Incorporated |
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3 / 13 page ![]() AP22653Q Document number: DS42760 Rev. 4 - 2 3 of 13 www.diodes.com September 2021 © Diodes Incorporated AP22653Q Absolute Maximum Ratings (@ TA = +25°C, unless otherwise specified.) Symbol Parameter Ratings Unit ESD HBM Human Body Model ESD Protection, per AEC Q100-002(7) 2 kV CDM Charged Device Model ESD Protection, per AEC Q100-011 750 V IEC System Level Surges per IEC61000-4-2. 1999 Applied to Output Terminals of EVM (Note 6) 16 kV VIN, VOUT, VFAULT , VILIM, EN V Voltage on IN, OUT, FAULT , ILIM, EN -0.3 to +6.0 V — Continuous FAULT Sink Current 25 mA — ILIM Source Current 1 mA ILOAD Maximum Continuous Load Current Internal Limited A TJ(MAX) Maximum Junction Temperature -40 to +150 °C TSTG Storage Temperature Range (Note 5) -65 to +150 °C RΘJA Thermal Resistance, Junction to Ambient (Note 8) SOT26 120 °C/W RΘJC Thermal Resistance, Junction to Case (Note 8) SOT26 35 °C/W Notes: 5. UL Recognized Rating from -30°C to +70°C (Diodes Incorporated qualified TSTG from -65°C to +150°C). 6. External capacitors need to be connected to the output, EVM board was tested with external capacitor. This level is a pass test only and not a limit. 7. AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 8. The JEDEC high-K (2s2p) board used to derive this data was a 3inch x 3inch, multilayer board with 1oz internal power and ground planes with 2oz copper traces on top and bottom of the board. Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, can cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability can be affected by exposure to absolute maximum rating conditions for extended periods of time. Semiconductor devices are ESD sensitive and can be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices. Recommended Operating Conditions (@ TA = +25°C, unless otherwise specified.) Symbol Parameter Min Max Unit VIN Input Voltage 3 5.5 V IOUT Continuous Output Current (-40°C ≤ TJ ≤ +105°C) 0 1.5 A Continuous Output Current (-40°C ≤ TJ ≤ +125°C) 0 1.2 A EN V Enable Voltage 0 5.5 V VIH High-Level Input Voltage on EN 1.5 VIN V VIL Low-Level Input Voltage on EN 0 0.4 V RLIM Current-Limit Threshold Resistor Range (1% Initial Tolerance) 15 210 kΩ IO Continuous FAULT Sink Current 0 10 mA — Input De-Coupling Capacitance, IN to GND 0.1 — µF TJ Operating Junction Temperature IOUT ≤ 1.5 A -40 +105 °C Operating Junction Temperature IOUT ≤ 1.2 A -40 +125 °C |
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