TSMF1000, TSMF1020, TSMF1030

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Vishay Semiconductors

Rev. 1.9, 22-Oct-2021

2

Document Number: 81061

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Fig. 1 - Power Dissipation vs. Ambient Temperature

Fig. 2 - Forward Current vs. Ambient Temperature

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

VR

5V

Forward current

IF

100

mA

Peak forward current

tp/T = 0.5, tp

= 100 μs

IFM

200

mA

Surge forward current

tp = 100 μs

IFSM

1A

Power dissipation

PV

190

mW

Junction temperature

Tj

100

°C

Ambient temperature range

Tamb

-40 to +85

°C

Storage temperature range

Tstg

-40 to +100

°C

Soldering temperature

t

≤ 5 s

Tsd

260

°C

Thermal resistance junction to ambient

JESD51

RthJA

250

K/W

0

20

40

60

80

100

120

140

160

180

200

220

0

102030405060708090 100

T

A - Ambient Temperature (°C)

R

thJA = 250 K/W

10

100

1000

10000

Axis Title

10

100

1000

10000

Axis Title

0

10

20

30

40

50

60

70

80

90

100

110

120

0

102030405060708090 100

T

A - Ambient Temperature (°C)

R

thJA = 250 K/W

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 20 mA

VF

-1.3

1.5

V

IF = 100 mA, tp = 100 μs

VF

-1.5

-

V

IF = 1 A, tp = 100 μs

VF

-2.6

-

V

Temperature coefficient of VF

IF = 20 mA

TKVF

--1.4

-

mV/K

Reverse current

IR

Not designed for reverse operation

μA

Junction capacitance

VR = 0 V, f = 1 MHz, E = 0

Cj

-56-

pF

Radiant intensity

IF = 20 mA

Ie

15

27

40

mW/sr

IF = 100 mA, tp = 100 μs

Ie

-

155

-

mW/sr

Radiant power

IF = 20 mA, tp = 20 ms

φe

-10-

mW

Temperature coefficient of

φe

IF = 20 mA

TK

φe

-

-0.3

-

%/K

Angle of half intensity

ϕ

-± 11

-

°

Peak wavelength

IF = 20 mA

λp

-

890

-

nm

Spectral bandwidth

IF = 20 mA

Δλ

-35-

nm

Temperature coefficient of

λp

IF = 20 mA

TK

λp

-0.3

-

nm/K

Rise time

IF = 20 mA

tr

-15-

ns

Fall time

IF = 20 mA

tf

-15-

ns