VSLB4940

www.vishay.com

Vishay Semiconductors

Rev. 1.0, 24-Jun-16

2

Document Number: 84343

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Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Fig. 2 - Forward Current Limit vs. Ambient Temperature

0

20

40

60

80

100

120

140

160

180

0

1020

3040506070

8090100

21317

Tamb - Ambient Temperature (°C)

R

thJA = 300 K/W

0

20

40

60

80

100

120

0

10

203040

50607080

90 100

Tamb - Ambient Temperature (°C)

21318

R

thJA = 300 K/W

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA, tp = 20 ms

VF

1.22

1.42

1.62

V

Temperature coefficient of VF

IF = 1 mA

TKVF

--1.5

-

mV/K

Reverse current

VR = 5 V

IR

-

-

10

μA

Junction capacitance

VR = 0 V, f = 1 MHz, E = 0 mW/cm2

CJ

-21-

pF

Radiant intensity

IF = 100 mA, tp = 20 ms

Ie

32

65

110

mW/sr

Radiant power

IF = 100 mA, tp = 20 ms

φe-

40

-

mW

Temperature coefficient of radiant

power

IF = 1 mA

TK

φe

-

-1.1

-

%/K

IF = 100 mA

TK

φe

--0.51

-

%/K

Angle of half intensity

ϕ

-± 22

-

deg

Peak wavelength

IF = 30 mA

λp

-

940

-

nm

Spectral bandwidth

IF = 30 mA

Δλ

-30-

nm

Temperature coefficient of lp

IF = 30 mA

TKλp

-0.25-

nm

Rise time

IF = 100 mA, 20 % to 80 %

tr

-15-

ns

Fall time

IF = 100 mA, 20 % to 80 %

tf

-15-

ns

Virtual source diameter

d

-

2

-

mm