IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH 30N40Q

IXFT 30N40Q

Symbol

TestConditions

Characteristic Values

(T

min.

typ. max.

g

fs

V

18

25

S

C

iss

3300

pF

C

oss

V

GS

= 0 V, V

540

pF

C

rss

150

pF

t

d(on)

25

ns

t

r

V

GS

= 10 V, V

35

ns

t

d(off)

R

51

ns

t

f

12

ns

Q

g(on)

95

nC

Q

gs

V

GS

= 10 V, V

22

nC

Q

gd

44

nC

R

thJC

0.42 K/W

R

thCK

(TO-247)

0.25

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

TestConditions

min.

typ. max.

I

S

V

30

A

I

SM

Repetitive; pulse width limited by T

JM

120

A

V

SD

I

1.5

V

Pulse test, t £ 300 ms, duty cycle d £ 2 %

t

rr

1.1

250

ns

Q

RM

I

mC

I

RM

10

A

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205

0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

ÆP

3.55

3.65

.140

.144

Q

5.89

6.40

0.232

0.252

R

4.32

5.49

.170

.216

S

6.15

BSC

242

BSC

Terminals:

1 - Gate

2 - Drain

3 - Source

Tab - Drain

1

2

3

TO-247 AD (IXFH) Outline

TO-268 Outline

Terminals: 1 - Gate

2 - Drain

3 - Source

Tab - Drain