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2SB1167 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SB1167
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB1167 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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1
isc Website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
2SB1167
DESCRIPTION
·
Collector–Emitter Sustaining Voltage
VCEO: -100 V(Min)
·
Low Collector Saturation Voltage
: VCE(sat) = -0.4V(Max.)@ IC=-1.5A
·
Complement to the NPN 2SD1724
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-3
A
PC
Collector Power Dissipation
TC=25℃
-20
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
6.5
℃
/W


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