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D44VH10 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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D44VH10 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 2022-12-09 1 isc Silicon NPN Power Transistors D44VH10 DESCRIPTION · Low Collector-Emitter Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC = 8A · Fast Switching Speeds · Complement to Type D45VH10 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 100 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 15 A PC Collector Power Dissipation @TC=25℃ 83 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.5 ℃ /W |
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