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Document Number: 81562

518

Rev. 1.7, 08-Sep-08

TEST2600

Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Note

Tamb = 25 °C, unless otherwise specified

BASIC CHARACTERISTICS

Tamb = 25 °C, unless otherwise specified

Fig. 2 - Collector Dark Current vs. Ambient Temperature

Fig. 3 - Relative Collector Current vs. Ambient Temperature

020

40

60

80

0

20

40

80

100

120

T

amb - Ambient Temperature (°C)

100

20907

60

10

30

50

70

90

BASIC CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Collector emitter breakdown voltage

IC = 1 mA

V(BR)CEO

70

V

Collector emitter dark current

VCE = 20 V, E = 0

ICEO

1

100

nA

Collector emitter capacitance

VCE = 5 V, f = 1 MHz, E = 0

CCEO

6pF

Collector light current

Ee = 1 mW/cm2, λ = 950 nm,

VCE = 5 V

Ica

12.5

mA

Angle of half sensitivity

horizontal

ϕ

1

± 30

deg

vertical

ϕ

2

± 60

deg

Wavelength of peak sensitivity

λ

p

920

nm

Range of spectral bandwidth

λ

0.5

850 to 980

nm

Collector emitter saturation voltage

Ee = 1 mW/cm2, λ = 950 nm,

IC = 0.1 mA

VCEsat

0.3

V

Turn-on time

VS = 5 V, IC = 5 mA, RL = 100 Ω

ton

6µs

Turn-off time

VS = 5 V, IC = 5 mA, RL = 100 Ω

toff

5µs

Cut-off frequency

VS = 5 V, IC = 5 mA, RL = 100 Ω

fc

110

kHz

94 8249

20

100

40

60

80

T

amb - Ambient Temperature (°C)

10

101

102

103

104

V

CE = 10 V

0

0.6

0.8

1.0

1.2

1.4

2.0

20

40

60

80

100

1.6

1.8

λ

94 8239

T

amb - Ambient Temperature (°C)

V

CE = 5 V

E

e = 1 mW/cm

2

= 950 nm