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KSC5026 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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KSC5026 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor KSC5026 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base breakdown voltage IC=1mA ; IB=0 1100 V V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; IB=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC=750mA; IB= 150mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC=750mA; IB= 150mA 1.5 V ICBO Collector Cutoff Current VCB=800V ; IE= 0 10 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μ A hFE-1 DC Current Gain IC= 100mA ; VCE=5V 10 40 hFE-2 DC Current Gain IC= 500mA ; VCE=5V 8 fT Current-Gain—Bandwidth Product IE= -100mA; VCE= 10V 15 MHz hFE Classifications N R O 10-20 15-30 20-40 |
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