EM65XX

Copyright

© 2005, EM Microelectronic-Marin SA

13

www.emmicroelectronic.com

VDD=5.0V, T=25°C, f=200kHz (note1) (unless otherwise specified) Rext

≈ 62kΩ

Parameter

Conditions

Symb.

Min.

Typ.

(note1)

Max.

Unit

ACTIVE Supply Current

+25°C (note2)

IVDDa

80.0

100.0

µA

ACTIVE Supply Current

(in active mode)

(note2) (note3)

0°C...+60°C

IVDDa

120.0

µA

STANDBY Supply Current

+25°C

IVDDh

30.0

40.0

µA

STANDBY Supply Current

(in Halt mode)

(note3)

0°C...+60°C

IVDDh

50.0

µA

SLEEP Supply Current

+25°C

IVDDs

1.0

2.0

µA

SLEEP Supply Current

(SLEEP =1)

(note3)

0°C...+60°C

IVDDs

5.0

µA

Note1: For current measurement the corresponding resistor for targeted frequency

±20% is

selected; Rext : external resistor between the RCin and Vss pins.

All I/O pins without internal Pull Up/Down are pulled to VDD externally.

Note2: Test loop with successive writing and reading of two different addresses with an inverted

values (five instructions should be reserved for this measurement),

Note3: NOT tested at temperature if delivered in chip form.