3

OptiMOSTM3Power-Transistor,120V

BSC0302LS

Rev.2.2,2022-09-21

Final Data Sheet

1Maximumratings

atTA=25°C,unlessotherwisespecified

Table2Maximumratings

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Continuous drain current

ID

-

-

-

-

-

-

99

77

12

A

VGS=10V,TC=25°C

VGS=10V,TC=100°C

VGS=4.5V,TA=25°C,RthJA=45°C/W1)

Pulsed drain current

2)

ID,pulse

-

-

394

A

TA=25°C

Avalanche energy, single pulse

3)

EAS

-

-

377

mJ

ID=50A,RGS=25

Ω

Gate source voltage

VGS

-20

-

20

V

-

Power dissipation

Ptot

-

-

156

W

TC=25°C

Operating and storage temperature

Tj,Tstg

-55

-

150

°C

IEC climatic category; DIN IEC 68-1:

55/150/56

2Thermalcharacteristics

Table3Thermalcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Thermal resistance, junction - case,

bottom

RthJC

-

0.45

0.8

°C/W -

Thermal resistance, junction - case,

top

RthJC

-

-

18

°C/W -

Thermal resistance, junction - ambient,

minimal footprint

RthJA

-

-

62

°C/W -

Thermal resistance, juntion - ambient,

6 cm² cooling area

2)

RthJA

-

-

45

°C/W -

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

2) See Diagram 3 for more detailed information

3) See Diagram 13 for more detailed information