Velocium Products

18 - 20 GHz HPA

- APH478

37.0-40.0 GHz GaAs MMIC

Power Amplifier

Page 1 of 6

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2006 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

May 2006 - Rev 10-May-06

P1012

Mimix Broadband’s two stage 37.0-40.0 GHz GaAs

MMIC power amplifier is optimized for linear operation

with a third order intercept point of +37.0 dBm. This

MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT

device model technology, and is based upon electron

beam lithography to ensure high repeatability and

uniformity. The chip has surface passivation to protect

and provide a rugged part with backside via holes and

gold metallization to allow either a conductive epoxy

or eutectic solder die attach process. This device is well

suited for Millimeter-wave Point-to-Point Radio, LMDS,

SATCOM and VSAT applications.

Absolute Maximum Ratings

General Description

Supply Voltage (Vd)

Supply Current (Id1,2)

Gate Bias Voltage

Input Power (Pin)

Storage Temperature (Tstg)

Operating Temperature (Ta)

Channel Temperature (Tch)

+5.5 VDC

600,600 mA

+0.3 VDC

+19 dBm

-55 to MTTF Table

MTTF Table

(3) Channel temperature affects a device's MTTF. It is

recommended to keep channel temperature as low as

possible for maximum life.

3

Features

Chip Device Layout

3

Excellent Linear Output Amplifier Stage

15.0 dB Small Signal Gain

+28.0 dBm Output P1dB Compression Point

+37.0 dBm Third Order Intercept (OIP3)

100% On-Wafer RF, DC and Output Power Testing

100% Visual Inspection to MIL-STD-883

Method 2010

Frequency Range (f )

Input Return Loss (S11)

Output Return Loss (S22)

Small Signal Gain (S21)

Gain Flatness ( S21)

Reverse Isolation (S12)

Output Power for 1 dB Compression (P1dB)

Output Third Order Intercept Point (OIP3)

Drain Bias Voltage (Vd1,2)

Gate Bias Voltage (Vg1,2)

Supply Current (Id) (Vd=5.0V, Vg=-0.5V Typical)

Parameter

Units

GHz

dB

dB

dB

dB

dB

dBm

dBm

VDC

VDC

mA

Min.

37.0

-

-

-

-

-

-

-

-

-1.0

-

Typ.

-

10.0

15.0

15.0

+/-0.5

TBD

+28.0

+37.0

+5.0

-0.5

1080

Max.

40.0

-

-

-

-

-

-

-

-

0.0

-

(1) Measured at +18 dBm per tone output carrier level across the full frequency band.

(2) Measured using constant current.

1,2

2