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74F779 Datasheet(PDF) 2 Page - NXP Semiconductors |
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74F779 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() Philips Semiconductors Product specification 74F779 8-bit bidirectional binary counter (3-State) 2 1989 Sep 20 853–0385 97676 FEATURES • Multiplexed 3-State I/O ports for bus oriented applications • Built-in look-ahead carry capability • Center power pins to reduce effects of package inductance • Count frequency 145MHz typical • Supply current 90mA typical • See 74F269 for 24-pin separate I/O port version • See 74F579 for 20-pin version • See 74F1779 for extended function version of the 74F799 DESCRIPTION The 74F779 is a fully synchronous 8-stage Up/Down Counter with multiplexed 3-State I/O ports for bus-oriented applications. All control functions (hold, count up, count down, synchronous load) are controlled by two mode pine (S0, S1). The device also features carry look-ahead for easy cascading. All state changes are initiated by the rising edge of the clock. When CET is High the data outputs are held in their current state and TC is held High. The TC output is not recommended for use as a clock or asynchronous reset due to the possibility of decoding spikes. PIN CONFIGURATION 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 I/O1 I/O0 CP CET VCC TC S0 S1 OE I/O2 I/O3 GND I/O4 I/O5 I/O7 I/O6 SF01259 TYPE TYPICAL fMAX TYPICAL SUPPLY CURRENT (TOTAL) 74F779 145MHz 90mA ORDERING INFORMATION DESCRIPTION COMMERCIAL RANGE VCC = 5V ±10%, Tamb = 0°C to +70°C PKG DWG # 16-Pin Plastic DIP N74F779N SOT38-4 16-Pin Plastic SOL N74F779D SOT 162-1 INPUT AND OUTPUT LOADING AND FAN-OUT TABLE PINS DESCRIPTION 74F(U.L.) HIGH/LOW LOAD VALUE HIGH/LOW I/On Data inputs 3.5/1.0 70 µA/0.6mA I/On Data outputs 150/40 3.0mA/24mA S0, S1 Select inputs 1.0/1.0 20 µA/0.6mA OE Output Enable input (active Low) 1.0/1.0 20 µA/0.6mA CET Count Enable Trickle input (active Low) 1.0/1.0 20 µA/0.6mA CP Clock input (active rising edge) 1.0/1.0 20 µA/0.6mA TC Terminal Count output (active Low) 50/33 1.0mA/20mA NOTE: One (1.0) FAST Unit Load is defined as: 20 µA in the High state and 0.6mA in the Low state. |
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