STGP10NC60HD datasheet(4/19 Pages) STMICROELECTRONICS

4 / 19 page

Electrical characteristics

STGB10NC60HD, STGD10NC60HD, STGF10NC60HD, STGP10NC60HD

4/19

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE= 0)

IC= 1 mA

600

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 5 A

VGE = 15 V, IC = 5 A,

TC = 125 °C

1.9

1.7

2.5

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 250 µA

3.75

5.75

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

VCE = 600 V, TC = 125 °C

150

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ± 20 V

±100

gfs

(1)

Pulse duration = 300

μs, duty cycle 1.5 %

Forward transconductance

VCE = 15 V, IC= 5 A

3.5

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

365

8.3

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 390 V, IC = 5 A,

VGE = 15 V

(see Figure 19)

19.2

4.5

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