SH2103WN

lChip Information

200mm

0.07±0.01mm

4.50mm×4.50mm

0.10±0.03mm

Wafer Size

Wafer Thickness

Chip Size

Cut Line Width

This chip data sheet refers to the device data sheet

RGTVX6TS65D

Passivation

Top Side Metallization

Back Side Metallization

lFurther Electrical Characteristics

Polyimide

AlSiCu:5.0μm

Ti/Ni:0.4μm/Au:0.05μm

Switching characteristics and thermal properties are depending strongly on module design

and mounting technology and can therefore not be specified for a bare die.

4.50

0.10±0.03

Unit：mm

: Pad Area

①

: Anode Bonding Pad

Backside : Cathode

Unit : μm

①

4500

4400

3750

325

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2023.02 - Rev.A

Datasheet