SQJ126EP

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Vishay Siliconix

S20-0744-Rev. A, 05-Oct-2020

2

Document Number: 77126

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %

b. Guaranteed by design, not subject to production testing

c. Independent of operating temperature







Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.



SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0, ID = 250 μA

30

-

-

V

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.5

3.0

3.5

Gate-source leakage

IGSS

VDS = 0 V, VGS = ± 20 V

-

-

± 100

nA

Zero gate voltage drain current

IDSS

VGS = 0 V

VDS = 40 V

-

-

1

μA

VGS = 0 V

VDS = 30 V, TJ = 125 °C

-

-

50

VGS = 0 V

VDS = 30 V, TJ = 175 °C

-

-

250

On-state drain current a

ID(on)

VGS = 10 V

VDS  5 V

30

-

-

A

Drain-source on-state resistance a

RDS(on)

VGS = 10 V

ID = 15 A

-

0.0007 0.00094



VGS = 10 V

ID = 15 A, TJ = 125 °C

-

-

0.00165

VGS = 10 V

ID = 15 A, TJ = 175 °C

-

-

0.0020

Forward transconductance b

gfs

VDS = 15 V, ID = 10 A

-

100

-

S

Dynamic b

Input capacitance

Ciss

VGS = 0 V

VDS = 25 V, f = 1 MHz

-

5782

8095

pF

Output capacitance

Coss

-

1812

2537

Reverse transfer capacitance

Crss

-

174

244

Total gate charge c

Qg

VGS = 10 V

VDS = 15 V, ID = 15 A

-

101

152

nC

Gate-source charge c

Qgs

-26

-

Gate-drain charge c

Qgd

-24

-

Gate resistance

Rg

f = 1 MHz

0.8

1.6

2.4



Turn-on delay time c

td(on)

VDD = 15 V, RL = 0.5 

ID  15 A, VGEN = 10 V, Rg = 1 

-17

26

ns

Rise time c

tr

-18

27

Turn-off delay time c

td(off)

-39

59

Fall time c

tf

-17

26

Source-Drain Diode Ratings and Characteristics b

Pulsed current a

ISM

-

-

1816

A

Forward voltage

VSD

IF = 15 A, VGS = 0 V

-

-

1.1

V

Body diode reverse recovery time

trr

IF = 10 A, di/dt = 100 A/μs

-

59

118

ns

Body diode reverse recovery charge

Qrr

-66

132

nC

Reverse recovery fall time

ta

--

-

ns

Reverse recovery rise time

tb

-33

-

Body diode peak reverse recovery

current

IRM(REC)

-2

-

A