IXYS reserves the right to change limits, test conditions, and dimensions.

IXTQ 52N30P

IXTT 52N30P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ. Max.

g

fs

V

20

30

S

C

iss

3490

pF

C

oss

V

GS

= 0 V, V

550

pF

C

rss

130

pF

t

d(on)

24

ns

t

r

V

22

ns

t

d(off)

R

G

= 4

Ω (External)

60

ns

t

f

20

ns

Q

g(on)

110

nC

Q

gs

V

25

nC

Q

gd

53

nC

R

thJC

0.31

K/W

R

thCK

(TO-3P)

0.21

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

52

A

I

SM

Repetitive

150

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

T

rr

I

-di/dt = 100 A/

µs

V

Q

RM

250

3.0

ns

µC

TO-268 Outline

TO-3P (IXTQ) Outline

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343