MAC9D, MAC9M, MAC9N

http://onsemi.com

5

TJ, JUNCTION TEMPERATURE (°C)

– 50

– 30

10

50

90

110

130

100

1

Q2

10

–10

30

70

Q1

Q3

TJ, JUNCTION TEMPERATURE (°C)

1

0.4

– 50

– 30

– 10

10

70

110

130

Q1

Q2

50

90

0.45

0.5

0.55

0.65

0.75

0.85

0.9

0.95

0.6

0.7

0.8

Q3

30

Figure 6. Gate Trigger Current Variation

Figure 7. Gate Trigger Voltage Variation

Figure 8. Critical Rate of Rise of Off-State Voltage

(Exponential)

RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)

5000

4K

3K

2K

1K

0

1000

100

10

1

Figure 9. Critical Rate of Rise of

Commutating Voltage

(di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

tw

VDRM

(di/dt)c =

6f ITM

1000

f =

1

2 tw

TJ = 125°C

100

°C

75

°C

10

60

100

10

1

15

20

25

30

35

40

45

50

55

4.5K

3.5K

2.5K

1.5K

1K

1K

500

MT2 POSITIVE

MT2 NEGATIVE

Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

LL

1N4007

200 V

+

MEASURE

I

–

CHARGE

CONTROL

CHARGE

TRIGGER

NON-POLAR

CL

51

W

MT2

MT1

1N914

G

200 VRMS

ADJUST FOR

ITM, 60 Hz VAC

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.