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STW5NK100Z Datasheet(PDF) 6 Page - STMicroelectronics

Part # STW5NK100Z
Description  N-channel 1000V - 2.7??- 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH??Power MOSFET
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW5NK100Z Datasheet(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STP5NK100Z - STF5NK100Z - STW5NK100Z
6/16
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
3.5
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
14
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD= 3.5 A, VGS=0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 3.5 A,
di/dt = 100A/µs,
VDD=30 V
(see Figure 22)
605
3.09
10.5
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 3.5 A,
di/dt = 100A/µs,
VDD=35 V, Tj=150°C
(see Figure 22)
742
4.2
11.2
ns
µC
A



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