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NSAM265SF Datasheet(PDF) 21 Page - National Semiconductor (TI) |
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NSAM265SF Datasheet(HTML) 21 Page - National Semiconductor (TI) |
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21 / 58 page ![]() 30 Command Set (Continued) Mnemonic Command Type SA Description Opcode Hex Command Parameters Return Value Description Length Description Length Bytes Bytes SDET S Set Detectors Mask 10 Detectors Mask 1 None SE S Skip to End of Message 24 None None SETD S Set Time and Day 0F TimeDay 2 None SF S Skip Forward 22 Length of Time 2 None SMT S Set Message Tag 05 Message Tag 2 None SO A Say One Word 07 Word Number 1 None SPS S Set Playback Speed 16 Speed Value 1 None SS A Say Sentence 1F Sentence n 1 None SV S Set Vocabulary Type 20 Mode Id 1 a 1 None SW A Say Words 21 N Word1 Wordn 1 a n None TUNE S Tune Index 15 Index Value 1 a 2 None VC S Volume Control 28 IncrementDecrement 1 None WRAM S Write RAM 17 Message Tag Data 2 a 32 None 32 COMMANDS DESCRIPTION The commands are listed in alphabetical order Each command indicates by a the chips for which it is intended Commands which are not intended for a particular chip are valid for that chip but have no effect Chip-specific features of a command which is intended for both chips are indicated by the chip name in the margin The execution time for all commands when specified in- cludes the time required for the microcontroller to retrieve the return value where appropriate The execution time does not include the protocol timing overhead ie the execution times are measured from the moment that the command is detected as valid until the command is fully executed AMAP Check and Map ARAM action number NSAM265SR NSAM265SFV This command runs diagnostics on the ARAMs and returns a 1-byte result The following actions are performed accord- ing to the 1-byte action number parameter Action 0 Checks the ARAM configuration The return value is encod- ed as follows Bits 0 – 1 Number of ARAM devices (1 or 2) Bits 2 – 3 Number of ARAM columns in multiples of 1k units (1 or 2) Bits 4 – 6 Number of ARAM rows in multiples of 1k units (1 2or4) Action 1 This action is intended to be carried out on the production line It performs the following tests Address line test Scan one row from start to end and from end to start Write to line X and check that line Y is not written (RAS CAS not connected test) Walking 1 and walking 0 on the data lines Action 1 then performs Action 3 (see below) on the first 60 rows only This allows you to record a short memo of up to 5-seconds duration to check the system and codec Execu- tion time is less than 1 second This action returns 0 if the ARAMs pass the connectivity test or the ID of the first ARAM to fail The return value is 1-byte long IDs are allocated according to the following scheme TLEE12378 – 15 Action 2 Performs a one-pass test clears the entire ARAM to 0 and marks all the bad rows in the internal row table If more than 05% nibbles in a row are bad the row is mapped as bad If more than 200 of the rows are bad the EV ERROR bit in the status word and the ERR ARAM bit in the error word are set to 1 This operation does not detect ARAM cross-talk problems Action 2 of the AMAP command should be invoked immedi- ately after the INIT command and is valid only in the IDLE state If this command is not issued the ARAM is consid- ered as a DRAM (no errors) The test takes up to 20 seconds Action 3 Performs a two-pass test to map and return the number of bad rows If more than 05% nibbles in a row are bad the row is mapped as bad If more than 5% of the rows are bad the EV ERROR bit in the status word and the ERR ARAM bit in the error word are set to 1 This diagnostic also detects ARAM cross-talk problems 21 |
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