STP55NF datasheet(4/19 Pages) STMICROELECTRONICS

Part #	STP55NF

Description	N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages

PDF	19 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 19 page

Electrical characteristics

STB55NF06, STP55NF06, STP55NF06FP

4/19

Doc ID 7544 Rev 11

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250 µA, VGS =0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 60 V

VDS = 60 V,@ TJ= 125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 27.5 A

0.015 0.018

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1MHz,

VGS = 0

1300

300

105

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 30 V, ID = 27.5 A

RG =4.7 Ω VGS = 10 V

(see Figure 15)

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 48 V, ID = 55 A,

VGS = 10 V

(see Figure 16)

44.5

10.5

17.5

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