STP5NK60Z datasheet(2/24 Pages) STMICROELECTRONICS

2 / 24 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

DPAK,TO-220

TO-220FP

VDS

Drain-source voltage

600

VGS

Gate-source voltage

±30

Drain current (continuous) at TC = 25 °C

5 (1)

Drain current (continuous) at TC = 100 °C

3.16

3.16 (1)

IDM (2)

Drain current (pulsed)

20 (1)

PTOT

Total dissipation at TC = 25 °C

ESD

Gate-source human body model

(R = 1.5 kΩ, C = 100 pF)

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat-sink (t = 1 s, TC = 25 °C)

2.5

dv/dt (3)

Peak diode recovery voltage slope

4.5

V/ns

Operating junction temperature range

-55 to 150

°C

Tstg

Storage temperature range

1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area.

3. ISD ≤ 5 A, di/dt ≤ 200 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

DPAK

TO-220

TO-220FP

Rthj-case

Thermal resistance junction-case

1.39

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

°C/W

Rthj-pcb (1)

Thermal resistance junction-pcb

°C/W

1. When mounted on 1 inch² FR-4, 2 Oz copper board.

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

220

STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP

Electrical ratings

DS2857 - Rev 8

page 2/24

STP5NK60Z Datasheet(PDF) 2 Page - STMicroelectronics

STP5NK60Z Datasheet(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24

Datasheet Download

Link URL