M58WR032EB100ZB6T datasheet(68/81 Pages) STMICROELECTRONICS

68 / 81 page

M58WR032ET, M58WR032EB

68/81

Figure 25. Block Erase Flowchart and Pseudo Code

Note: 1. If an error is found, the Status Register must be cleared before further Program/Erase operations.

2. Any address within the bank can be used also.

Write 20h (2)

AI06174b

Start

Write Block

Address & D0h

Read Status

YES

SR7 = 1

YES

SR3 = 0

YES

SR4, SR5 = 1

VPP Invalid

Error (1)

Command

Sequence Error (1)

SR5 = 0

Erase Error (1)

End

YES

SR1 = 0

Erase to Protected

Block Error (1)

YES

erase_command ( blockToErase ) {

writeToFlash (blockToErase, 0x20) ;

/*see note (2) */

writeToFlash (blockToErase, 0xD0) ;

/* only A12-A20 are significannt */

/* Memory enters read status state after

the Erase Command */

} while (status_register.SR7== 0) ;

do {

status_register=readFlash (blockToErase) ;

/* see note (2) */

/* E or G must be toggled*/

if (status_register.SR3==1) /*VPP invalid error */

error_handler ( ) ;

if ( (status_register.SR4==1) && (status_register.SR5==1) )

/* command sequence error */

error_handler ( ) ;

if (status_register.SR1==1) /*program to protect block error */

error_handler ( ) ;

if ( (status_register.SR5==1) )

/* erase error */

error_handler ( ) ;

}

M58WR032EB100ZB6T Datasheet(PDF) 68 Page - STMicroelectronics

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