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2N6490 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2N6490
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6490 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
2N6490
DESCRIPTION
·
DC Current Gain Specified to 15 Amperes-
: hFE =20-150@ IC= -5.0A
=5.0(Min)@ IC= -15A
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min)
·
Complement to Type 2N6487
APPLICATIONS
·
Designed for use in general-purpose amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
IB
Base Current
-5
A
PC
Collector Power Dissipation
@ TC=25℃
75
W
Collector Power Dissipation
@ Ta=25℃
1.8
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.67
℃
/W
Rth j-c
Thermal Resistance, Junction to Ambient
70
℃
/W


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