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EMIF11-10002C4 Datasheet(PDF) 2 Page - STMicroelectronics |
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EMIF11-10002C4 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() EMIF11-10002C4 2/6 Symbol Parameter and test conditions Value Unit Tj Maximum junction temperature 150 °C TL Maximum lead temperature for soldering during 10s 260 °C Top Operating temperature range -40 to + 85 °C Tstg Storage temperature range -40 to +85 °C ABSOLUTE RATINGS (limiting values) Symbol Parameter VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage RI/O Series resistance between Input & Output Cline Input capacitance per line ELECTRICAL CHARACTERISTICS (T amb =25°C) I V IF IRM IR IPP VRM VF VBR VCL Symbol Test conditions Min. Typ. Max. Unit VBR IR =1mA 678 V IRM VRM = 3V per line 1µA RI/O Cells 4 to 12 90 100 110 Ω Cline VR = 0V (Cells 4 to 12) 45 pF 1 10 100 1,000 -50 -40 -30 -20 -10 0 dB Measurement Simulation MHz f/Hz Fig. 1: S21(dB) attenuation measurement and Aplac simulation. 1 10 100 1,000MHz -80 -70 -60 -50 -40 -30 f/Hz dB Fig. 2: Analog crosstalk measurements. |
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