IL610 IL611 IL612

IL613 IL614

2

Absolute Maximum Ratings

(1)

Parameters

Symbol

Min.

Typ.

Max.

Units

Test Conditions

Storage Temperature

T

S

-55

150

°C

Ambient Operating Temperature

T

A

-55

125

°C

Supply Voltage

V

DD

-0.5

7

V

Input Current

I

IN

-25

25

mA

Output Voltage

V

O

-0.5

V

V

Maximum Output Current

I

O

-10

10

mA

ESD

2

kV

HBM

Recommended Operating Conditions

Parameters

Symbol

Min.

Typ.

Max.

Units

Test Conditions

Ambient Operating Temperature

T

A

-40

85

°C

Supply Voltage

V

DD

3.0

5.5

V

Input Current

I

IN

0

10

mA

Output Current

I

OUT

-4

4

mA

Open Drain Reverse Voltage

V

SD

-0.5

V

Open Drain Voltage

V

DS

6.5

V

Open Drain Load Current

I

OD

4

mA

Input Signal Rise and Fall Times

t

50

ms

Common Mode Input Voltage

V

CM

400

V

AC RMS

Insulation Specifications

Parameters

Symbol

Min.

Typ.

Max.

Units

Test Conditions

Creepage Distance (external)

MSOP

3.010

mm

0.15’’ SOIC

4.026

mm

0.30’’ SOIC

8.077

mm

0.30’’ PDIP

7.077

mm

Internal Isolation Distance

9

µm

Leakage Current

0.2

µA

RMS

240 V

Barrier Impedance

Ω || pF

Safety & Approvals

IEC61010-1

TUV Certificate Numbers:

Approval Pending

Classification

Model

Package

Pollution

Degree

Material

Group

Max. Working

Voltage

IL610-1, IL610A-1, IL611-1, IL611A-1

MSOP

II

III

IL610-2, IL610A-2, IL611-2, IL611A-2, IL612-2, IL612A-2

PDIP

II

III

IL613, IL614

SOIC (0.3")

II

III

IL610-3, IL610A-3, IL611-3, IL611A-3, IL612-3, IL612A-3

IL613-3, IL614-3

SOIC (0.15")

II

III

UL 1577

Component Recognition program. File #:

Approval Pending

Rated 2500V

Electrostatic Discharge Sensitivity

This product has been tested for electrostatic sensitivity to the limits stated in the specifications. However, NVE recommends that all integrated

circuits be handled with appropriate care to avoid damage. Damage caused by inappropriate handling or storage could range from performance

degradation to complete failure.