BC184 datasheet(1/4 Pages) CDIL

Part #	BC184

Description	NPN SILICON PLANAR EPITAXIAL TRANSISTORS

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Manufacturer	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

BC184

BC184B

BC184C

TO-92

Plastic Package

Amplifier Transistors

ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNITS

Collector -Emitter Voltage

VCEO

30

V

Collector -Base Voltage

VCBO

45

V

Emitter -Base Voltage

VEBO

6V

Collector Current Continuous

IC

100

mA

Power Dissipation @ Ta=25ºC

PD

350

mW

Derate Above 25ºC

2.8

mW/ºC

Power Dissipation @ Tc=25ºC

PD

1W

Derate Above 25ºC

8

mW/ºC

Operating And Storage Junction

Tj, Tstg

-55 to +150

ºC

Temperature Range

THERMAL RESISTANCE

Junction to ambient

Rth(j-a)

357

ºC/W

Junction to case

Rth(j-c)

125

ºC/W

ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNITS

Collector -Emitter Voltage

VCEO

IC=2mA,IB=0

30

V

Collector -Base Voltage

VCBO

IC=10µA.IE=0

45

V

Emitter-Base Voltage

VEBO

IE=100µA, IC=0

6V

Collector-Cut off Current

ICBO

VCB=30V,IE=0

0.2

15

nA

Emitter-Cut off Current

IEBO

VEB=4V, IC=0

15

nA

DC Current Gain

hFE

IC=10µA,VCE=5V

100

BC184

IC=2mA,VCE=5V

240

800

IC=100mA*,VCE=5V

130

Collector Emitter Saturation Voltage

VCE(Sat)

IC=10mA,IB=0.5mA

0.07

0.25

V

IC=100mA,IB=5.0mA*

0.2

0.6

V

Base Emitter Saturation Voltage

VBE(Sat)

IC=100mA,IB=5mA*

1.2

V

Base Emitter On Voltage

VBE(ON)

IC=2mA,VCE=5V

0.55

0.62

0.7

V

IC=100µA,VCE=5V

0.5

V

IC=100mA,VCE=5V*

0.83

V

IS/ISO 9002

Lic# QSC/L- 000019.2

Continental Device India Limited

Data Sheet

Page 1 of 4

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