BF495C datasheet(1/4 Pages) CDIL

Part #	BF495C

Description	NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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1 / 4 page

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS

BF494

BF495

TO-92

Plastic Package

High Voltage Video Transistors

ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

Value

UNITS

Collector Emitter Voltage

VCEO

20

V

Collector Base Voltage

VCBO

30

V

Emitter Base Voltage

VEBO

5V

Collector Current (DC)

IC

30

mA

Collector Current(peak value)

ICM

30

mA

Total Power dissipation up to

Ptot

300

mW

Tamb = 25ºC

mW/ºC

Operating And Storage Junction

Tj, Tstg

-55 to +150

ºC

Temperature Range

THERMAL RESISTANCE

Junction to ambient

Rth(j-a)

420

K/W

ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

Min

Max

UNITS

Collector Cut- off Current

ICBO

VCB=20V,IE=0

500

nA

Collector Cut - off Current

ICBO

VCB=20V,IE=0

Ta =150 ºC

4.0

µA

EmitterCut off Current

IEBO

VEB=4V, IC=0

500

nA

Base Emitter Voltage

VBE(ON)

VCE=10V,IC=1mA

0.65

0.74

V

DC Current Gain

BF494

hFE *

IC=1mA,VCE=10V

67

221

BF494A

200

500

BF494B

110

215

BF 495

35

125

BF 495C

65

135

BF 495D

40

85

IS/ISO 9002

Lic# QSC/L- 000019.2

Continental Device India Limited

Data Sheet

Page 1 of 4

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