Nexperia

2PD601ASW

50 V, 100 mA NPN general purpose transistor

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

2PD601ASW

SC-70

plastic, surface-mounted package; 3 leads; 1.3 mm pitch;

2 mm x 1.25 mm x 0.95 mm body

SOT323

7. Marking

Table 4. Marking codes

Type number

Marking code[1]

2PD601ASW

%6F

[1] % = placeholder for manufacturing site code

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

60

V

VCEO

collector-emitter voltage open base

-

50

V

VEBO

emitter-base voltage

open collector

-

6

V

IC

collector current

-

100

mA

ICM

peak collector current

single pulse; tp ≤ 1 ms

-

200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

200

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-65

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, 35 μm copper, tin-plated and standard footprint.

2PD601ASW

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Product data sheet

1 October 2022

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