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2SC5746 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SC5746 Datasheet(HTML) 4 Page - Renesas Technology Corp |
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4 / 24 page ![]() Data Sheet PU10007EJ02V0DS 2 2SC5746 ELECTRICAL CHARACTERISTICS (TA = +25 °°°°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA – – 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA – – 100 nA DC Current Gain hFE Note 1 VCE = 1 V, IC = 10 mA 100 – 145 – RF Characteristics Gain Bandwidth Product fT VCE = 1 V, IC = 10 mA, f = 2 GHz 4.0 5.5 – GHz Insertion Power Gain S21e2 VCE = 1 V, IC = 10 mA, f = 2 GHz 3.0 4.5 – dB Noise Figure NF VCE = 1 V, IC = 10 mA, f = 2 GHz, ZS = Zopt –2.0 3.0 dB Reverse Transfer Capacitance Cre Note 2 VCB = 0.5 V, IE = 0 mA, f = 1 MHz 0.65 0.75 0.85 pF Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank FB Marking Y5 hFE Value 100 to 145 |
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