DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

NPN SILICON GERMANIUM RF TRANSISTOR

2SC5843

NPN SiGe RF TRANSISTOR FOR

LOW NOISE, HIGH-GAIN AMPLIFICATION

6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)

Document No. PU10353EJ02V0DS (2nd edition)

Date Published September 2003 CP(K)

Printed in Japan

 NEC Compound Semiconductor Devices 2003

The mark

shows major revised points.

FEATURES

• Ideal for low noise, high-gain amplification

NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

• Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz

• SiGe technology (fT = 60 GHz, fmax = 60 GHz)

• 6-pin lead-less minimold (M16, 1208 package)

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5843

50 pcs (Non reel)

• 8 mm wide embossed taping

2SC5843-T3

10 kpcs/reel

• Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25

°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

8.0

V

Collector to Emitter Voltage

VCEO

2.3

V

Emitter to Base Voltage

VEBO

1.2

V

Collector Current

IC

35

mA

Total Power Dissipation

Ptot

Note

80

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Mounted on 1.08 cm

2

× 1.0 mm (t) glass epoxy PCB