Electronic Components Datasheet Search
  English  ▼

X  

2SD2163 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # 2SD2163
Description  DARLINGTON POWER TRANSISTOR
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SD2163 Datasheet(HTML) 3 Page - Renesas Technology Corp

  2SD2163 Datasheet HTML 1Page - Renesas Technology Corp 2SD2163 Datasheet HTML 2Page - Renesas Technology Corp 2SD2163 Datasheet HTML 3Page - Renesas Technology Corp 2SD2163 Datasheet HTML 4Page - Renesas Technology Corp 2SD2163 Datasheet HTML 5Page - Renesas Technology Corp 2SD2163 Datasheet HTML 6Page - Renesas Technology Corp  
Zoom Inzoom in Zoom Outzoom out
 3 / 6 page
background image
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998
©
Document No. D16139EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SD2163
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND
LOW-SPEED HIGH-CURRENT SWITCHING
DATA SHEET
2002
The 2SD2163 is a mold power transistor developed for low-
speed high-current switching.
This transistor is ideal for direct
driving from the IC output of devices such as pulse motor drivers
and relay drivers of PC terminals.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• High DC current gain due to Darlington connection
hFE = 1,000 MIN. (@IC = 10 A)
• Low collector saturation voltage:
VCE(sat) = 1.5 V MAX. (@IC = 10 A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
150
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
8.0
V
Collector current (DC)
IC(DC)
±10
A
Collector current (pulse)
IC(pulse)*
±20
A
Base current (DC)
IB(DC)
1.0
A
Total power dissipation
PT (Tc = 25
°C)
30
W
Total power dissipation
PT (Ta = 25
°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 100 V, IE = 0
10
µA
DC current gain
hFE**
VCE = 2.0 V, IC = 10 A
1,000
6,000
30,000
Collector saturation voltage
VCE(sat)**
IC = 10 A, IB = 25 mA
1.1
1.5
V
Base saturation voltage
VBE(sat)**
IC = 10 A, IB = 25 mA
1.8
2.0
V
Turn-on time
ton
1.0
µs
Storage time
tstg
5.0
µs
Fall time
tf
IC = 10 A, IB1 =
−IB2 = 25 mA
RL = 5.0
Ω, VCC ≅ 50 V
Refer to the test circuit.
2.0
µs
** Pulse test PW
≤ 350
µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
J
hFE
1,000 to 3,000
2,000 to 5,000
4,000 to 10,000
8,000 to 30,000



Html Pages

1 2 3 4 5 6


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com