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2SD2163 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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2SD2163 Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 6 page ![]() The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. 1998 © Document No. D16139EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan DARLINGTON POWER TRANSISTOR 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING DATA SHEET 2002 The 2SD2163 is a mold power transistor developed for low- speed high-current switching. This transistor is ideal for direct driving from the IC output of devices such as pulse motor drivers and relay drivers of PC terminals. FEATURES • Mold package that does not require an insulating board or insulation bushing • High DC current gain due to Darlington connection hFE = 1,000 MIN. (@IC = 10 A) • Low collector saturation voltage: VCE(sat) = 1.5 V MAX. (@IC = 10 A) ABSOLUTE MAXIMUM RATINGS (Ta = 25 °°°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 8.0 V Collector current (DC) IC(DC) ±10 A Collector current (pulse) IC(pulse)* ±20 A Base current (DC) IB(DC) 1.0 A Total power dissipation PT (Tc = 25 °C) 30 W Total power dissipation PT (Ta = 25 °C) 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C *PW ≤ 10 ms, duty cycle ≤ 50% PACKAGE DRAWING (UNIT: mm) Electrode Connection ELECTRICAL CHARACTERISTICS (Ta = 25 °°°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector cutoff current ICBO VCB = 100 V, IE = 0 10 µA DC current gain hFE** VCE = 2.0 V, IC = 10 A 1,000 6,000 30,000 Collector saturation voltage VCE(sat)** IC = 10 A, IB = 25 mA 1.1 1.5 V Base saturation voltage VBE(sat)** IC = 10 A, IB = 25 mA 1.8 2.0 V Turn-on time ton 1.0 µs Storage time tstg 5.0 µs Fall time tf IC = 10 A, IB1 = −IB2 = 25 mA RL = 5.0 Ω, VCC ≅ 50 V Refer to the test circuit. 2.0 µs ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K J hFE 1,000 to 3,000 2,000 to 5,000 4,000 to 10,000 8,000 to 30,000 |
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