1998

©

Document No. D16157EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON TRANSISTOR

2SD2425

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

DATA SHEET

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The

2SD2425

is

a

transistor

featuring

high

current

capacitance in small dimension.

This transistor is ideal for

DC/DC converters and motor drivers.

FEATURES

• New package with dimensions in between those of small

signal and power signal package

• High current capacitance

• Low collector saturation voltage

• Complementary transistor with 2SB1578

QUALITY GRADES

• Standard

Please refer to “Quality Grades on NEC Semiconductor

Devices” (Document No. C11531E) published by NEC

Corporation to know the specification of quality grade on the

devices and its recommended applications.

PACKAGE DRAWING (UNIT: mm)

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

Ratings

Unit

Collector to base voltage

VCBO

60

V

Collector to emitter voltage

VCEO

60

V

Emitter to base voltage

VEBO

6.0

V

Collector current (DC)

IC(DC)

5.0

A

Collector current (pulse)

IC(pulse)

PW

≤ 10 ms, duty cycle ≤ 50 %

7.0

A

Base current (DC)

IB(DC)

1.0

A

Total power dissipation

PT

7.5 cm

2

× 0.7 mm ceramic board mounted

2.0

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Electrode connection

1. Emitter

2. Collector

3.Base