Nexperia

BC847QAS

45 V, 200 mA NPN/NPN general-purpose transistor

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

VCBO

collector-base voltage

open emitter

-

50

V

VCEO

collector-emitter voltage open base

-

45

V

VEBO

emitter-base voltage

open collector

-

6

V

IC

collector current

-

200

mA

ICM

peak collector current

-

200

mA

IBM

peak base current

single pulse; tp ≤ 1 ms

-

100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

230

mW

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

350

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

Tamb (°C)

-75

175

125

25

75

-25

aaa-007377

200

100

300

400

Ptot

(mW)

0

FR4 PCB, standard footprint

Fig. 2. Per device: Power derating curve

BC847QAS

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Product data sheet

10 September 2018

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