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ECH8401 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # ECH8401
Description  N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ECH8401 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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ECH8401
No.7609-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Forward Transfer Admittance
yfs
VDS=10V, ID=5A
14
20
S
RDS(on)1
ID=5A, VGS=4V
9
14
m
Ω
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=5A, VGS=3.1V
10
15.5
m
Ω
RDS(on)3
ID=2A, VGS=2.5V
12
19
m
Ω
Input Capacitance
Ciss
VDS=10V, f=1MHz
1700
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
330
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
270
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
29
ns
Rise Time
tr
See specified Test Circuit
150
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
220
ns
Fall Time
tf
See specified Test Circuit
160
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=5A
52
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=5A
2.6
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=5A
7.4
nC
Diode Forward Voltage
VSD
IS=10A, VGS=0
0.82
1.2
V
Switching Time Test Circuit
Electrical Connection
0
0.2
0.4
0.6
0.8
0.1
0.3
0.5
0.7
0.9
1.0
0
0.5
1.0
1.5
2.0
0
1
3
4
2
5
6
7
8
9
10
0
1
3
4
2
5
6
7
8
9
10
IT04242
IT04243
VGS=1.5V
VDS=10V
ID -- VDS
ID -- VGS
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V
PW=10
µs
D.C.
≤1%
P.G
50
Ω
G
S
D
ID=5A
RL=2Ω
VDD=10V
VOUT
ECH8401
VIN
4V
0V
VIN
DD
D
D
SS
S
G



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